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  4. Cryogenic sEKV Compact Model Applied to 22 NM FDSOI Enabling Low-Temperature Circuit Simulation
 
conference paper

Cryogenic sEKV Compact Model Applied to 22 NM FDSOI Enabling Low-Temperature Circuit Simulation

Han, Hung-Chi  
•
Zou, Yating  
•
Keskin, Batuhan  
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March 9, 2025
2025 9th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
2025 9th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
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Type
conference paper
DOI
10.1109/edtm61175.2025.11040807
Author(s)
Han, Hung-Chi  

École Polytechnique Fédérale de Lausanne

Zou, Yating  

École Polytechnique Fédérale de Lausanne

Keskin, Batuhan  

École Polytechnique Fédérale de Lausanne

Charbon, Edoardo  

École Polytechnique Fédérale de Lausanne

Enz, Christian  

École Polytechnique Fédérale de Lausanne

Date Issued

2025-03-09

Publisher

IEEE

Published in
2025 9th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
Start page

1

End page

3

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
AQUA  
MSIC-LAB  
Event nameEvent acronymEvent placeEvent date
2025 9th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

Hong Kong, Hong Kong

2025-03-09 - 2025-03-12

Available on Infoscience
July 2, 2025
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/251846
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