Delta-sigma loop based on charge pumping in SOI optical sensor
In this paper, the partially depleted SOI phototransistor has been used as a light intensity sensor. A pixel implementing the technique elaborated in [1] was designed and implemented on SOI technology. The circuit implements a first order delta-sigma modulator. Measured data show flux densities as low as 3mW/m2 and an SNR of 60 dB. © 2008 IEEE.
2-s2.0-67649921566
2008
1382
1385
Electrical Engineering, Ecole Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
Export Date: 19 January 2010
Source: Scopus
Art. No.: 4716704
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