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  4. Heterogeneous integration of lithium niobate and silicon nitride waveguides for wafer-scale photonic integrated circuits on silicon
 
research article

Heterogeneous integration of lithium niobate and silicon nitride waveguides for wafer-scale photonic integrated circuits on silicon

Chang, Lin
•
Pfeiffer, Martin H. P.  
•
Volet, Nicolas
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2017
Optics Letters

An ideal photonic integrated circuit for nonlinear photonic applications requires high optical nonlinearities and low loss. This work demonstrates a heterogeneous platform by bonding lithium niobate (LN) thin films onto a silicon nitride (Si3N4) waveguide layer on silicon. It not only provides large second-and third-order nonlinear coefficients, but also shows low propagation loss in both the Si3N4 and the LN-Si3N4 waveguides. The tapers enable lowloss- mode transitions between these two waveguides. This platform is essential for various on-chip applications, e.g., modulators, frequency conversions, and quantum communications. (C) 2017 Optical Society of America

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Type
research article
DOI
10.1364/Ol.42.000803
Web of Science ID

WOS:000394039500038

Author(s)
Chang, Lin
Pfeiffer, Martin H. P.  
Volet, Nicolas
Zervas, Michael  
Peters, Jon D.
Manganelli, Costanza L.
Stanton, Eric J.
Li, Yifei
Kippenberg, Tobias J.  
Bowers, John E.
Date Issued

2017

Publisher

Optical Society of America

Published in
Optics Letters
Volume

42

Issue

4

Start page

803

End page

806

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LPQM  
Available on Infoscience
May 1, 2017
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/136938
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