The present paper focuses on evaluating the temperature effects on Hall Effect sensors sensitivity behavior. To this purpose, an analysis of the factors affecting the sensors current-related sensitivity is performed, consisting of several pertinent considerations. An analytical investigation of the carrier concentration temperature dependence including the freeze-out effect influence was performed. This information was subsequently included in accurate prediction of the current-related sensitivity temperature behavior. For a specific CMOS integration process of the Hall sensors, a parabolic curve is obtained for the relative variation of the current-related sensitivity.