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conference paper

New functionality and ultra low power: key opportunities for post-CMOS era

Ionescu, Adrian M.  
2008
2008 International Symposium On Vlsi Technology, Systems And Applications (Vlsi-Tsa), Proceedings Of Technical Program
International Symposium on VLSI Technology, Systems and Applications

This paper addresses the challenges and opportunities offered by post-CMOS devices in terms of new functionality and ultra low power. It focuses on the illustration of: (i) the quest for the new electronic abrupt switches (tunnel-FET and IMOS/PIMOS) and (ii) the quest for new functionality that can be offered by some non-pure electronic functions (as nano-mechanical integrated functions offered by Suspended Gate - FET). It is shown that beneficial interactions between the Beyond CMOS and More-than-Moore domains should be considered in the post-CMOS era. A system design perspective with particular attention to the true benefits at circuit and system levels and the need for accompanying the technology and device effort by adapted design and/or new system architectures, is discussed and illustrated with some examples concerning power management, digital and analog applications.

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Type
conference paper
DOI
10.1109/VTSA.2008.4530804
Web of Science ID

WOS:000256564900033

Author(s)
Ionescu, Adrian M.  
Date Issued

2008

Publisher

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa

Published in
2008 International Symposium On Vlsi Technology, Systems And Applications (Vlsi-Tsa), Proceedings Of Technical Program
Start page

72

End page

73

Subjects

Transistor

•

Device

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
NANOLAB  
Event nameEvent placeEvent date
International Symposium on VLSI Technology, Systems and Applications

Hsinchu, TAIWAN

Apr 21-23, 2008

Available on Infoscience
November 30, 2010
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/61311
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