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  4. Compact Modeling of Lateral Nonuniform Doping in High-Voltage MOSFETs
 
research article

Compact Modeling of Lateral Nonuniform Doping in High-Voltage MOSFETs

Chauhan, Yogesh Singh  
•
Krummenacher, Franois
•
Gillon, Renaud
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2007
IEEE Transactions on Electron Devices
  • Details
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Type
research article
DOI
10.1109/TED.2007.896597
Web of Science ID

WOS:000246929200035

Author(s)
Chauhan, Yogesh Singh  
Krummenacher, Franois
Gillon, Renaud
Bakeroot, Benoit
Declercq, Michel J.  
Ionescu, Adrian Mihai  
Date Issued

2007

Publisher

Institute of Electrical and Electronics Engineers

Published in
IEEE Transactions on Electron Devices
Volume

54

Issue

6

Start page

1527

End page

1539

Editorial or Peer reviewed

NON-REVIEWED

Written at

EPFL

EPFL units
NANOLAB  
Available on Infoscience
November 8, 2010
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/57264
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