In this work we explore the fabrication and experimental characterization of multi-gate FD-SOI devices that can operate both as single electron transistors (SETs) and MOSFETs. FD-SOI SET operation is achieved with electrostatically induced tunneling barriers controllable by two barrier gates (B-L and B-R) and a front gate (FG), the device operation being additionally tunable by a bottom gate (BG). Coulomb blockade current measurements at 10 mK and 4 K demonstrate the possibility of a dynamic transition from a FD-SOI MOSFET and SET operation, making this technology suitable for hybrid SET-MOSFET low power cryogenic circuits for quantum information processing. Room temperature back-gate characterization has been performed on ultra-thin film devices proving the effective reduction of charge noise for a specific bias configuration. This experimental work is a step forward towards low noise planar FD-SOI quantum dots based devices with tunable electrostatic control.