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  4. Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs
 
conference paper

Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs

Najmzadeh, Mohammad  
•
De Michielis, Luca  
•
Bouvet, Didier  
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2009
The 35th international conference on Micro Nano Engineering
MNE 2009
  • Details
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Type
conference paper
Author(s)
Najmzadeh, Mohammad  
De Michielis, Luca  
Bouvet, Didier  
Dobrosz, Peter
Olsen, Sarah
Ionescu, Mihai Adrian  
Date Issued

2009

Published in
The 35th international conference on Micro Nano Engineering
Subjects

Si nanowire

•

Local stressor

•

Electron mobility enhancement

•

Local electron mobility

•

Local stress profile

Editorial or Peer reviewed

NON-REVIEWED

Written at

EPFL

EPFL units
NANOLAB  
Event nameEvent placeEvent date
MNE 2009

Ghent, Belgium

28 Sep.-1 Oct. 2009

Available on Infoscience
March 1, 2012
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/78239
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