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  4. A Physical Analysis of High Voltage MOSFET Capacitance Behaviour
 
conference paper

A Physical Analysis of High Voltage MOSFET Capacitance Behaviour

Anghel, C.
•
Chauhan, Y. S.  
•
Hefyene, N.
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2005
IEEE International Symposium on Industrial Electronics
  • Details
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Type
conference paper
DOI
10.1109/ISIE.2005.1528963
Author(s)
Anghel, C.
Chauhan, Y. S.  
Hefyene, N.
Ionescu, A. M.  
Date Issued

2005

Published in
IEEE International Symposium on Industrial Electronics
Volume

2

Start page

473

End page

477

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
NANOLAB  
Available on Infoscience
May 16, 2007
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/6926
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