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  4. Processing optimization of solution derived PbZr1-xTixO3 thin films for piezoelectric applications
 
research article

Processing optimization of solution derived PbZr1-xTixO3 thin films for piezoelectric applications

Seifert, A.  
•
Ledermann, N.  
•
Hiboux, S.
Show more
2001
Integrated Ferroelectrics

Processing optimization allowed the sol-gel fabrication of 1 mum thick, phase pure perovskite thin films with identical grain size and controlled texture. This made it possible to fabricate stress compensated beams to measure the transverse piezoelectric coefficient over the whole composition range of PbZr1-xTixO3. The highest value of -12.1 C/m(2) was measured for (100)/(001) textured PZT53/47. For (111) textured films the maximum value of -8.7 C/m(2) was found to be in the tetragonal phase field at 55% Ti.

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Type
research article
DOI
10.1080/10584580108016897
Web of Science ID

WOS:000167524700018

Author(s)
Seifert, A.  
Ledermann, N.  
Hiboux, S.
Baborowski, J.  
Muralt, P.  
Setter, N.  
Date Issued

2001

Published in
Integrated Ferroelectrics
Volume

35

Issue

1-4

Start page

1889

End page

1896

Subjects

pbzr1-xtixo3

•

piezoelectric

•

thin film

•

processing

•

transverse piezoelectric coefficient

•

deposition

•

layers

•

pbtio3

Note

Seifert, A Swiss Fed Inst Technol, Lab Ceram, CH-1015 Lausanne, Switzerland Swiss Fed Inst Technol, Lab Ceram, CH-1015 Lausanne, Switzerland

411XJ

Cited References Count:25

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LC  
Available on Infoscience
August 21, 2006
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/233464
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