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research article
Formation energy of threefold coordinated oxygen in SiO2 systems
Using density functional calculations in the generalized gradient approximation, the excitation energy for the formation of a threefold coordinated oxygen atom is evaluated. The bistable E-1' defect of alpha-quartz in the neutral charge state is used as a model system. The puckered configuration which shows a threefold coordinated oxygen center together with a doubly occupied silicon dangling bond is found to be at 2.7 eV higher energy than the Si-Si dimer configuration. (C) 2000 Elsevier Science B.V. All rights reserved.
Type
research article
Web of Science ID
WOS:000089432000084
Authors
Publication date
2000
Published in
Volume
166
Issue
1-4
Start page
451
End page
454
Peer reviewed
REVIEWED
Written at
EPFL
EPFL units
Available on Infoscience
October 8, 2009
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