conference paper
Modeling the imaginary branch in III-V tunneling devices: Effective mass vs k.p
2015
2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
In this work we extend an effective mass model for computing the drain current of tunnel-FETs to account for the anti-crossing of the light- and heavy-hole branches of the valence band. The model is validated by comparison with NEGF simulations based on a k · p Hamiltonian. Application of the new model to the electron-hole bilayer TFET is provided showing that the inclusion of the asymmetry of the real and imaginary branches of the hole dispersion relation is critical in determining the device characteristics. © 2015 IEEE.
Type
conference paper
Author(s)
Visciarelli, Michele
Palestri, Pierpaolo
Padilla, Jose L.
Gnudi, Antonio
Gnani, Elena
Date Issued
2015
Publisher
Published in
2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
Start page
273
End page
276
Editorial or Peer reviewed
NON-REVIEWED
Written at
EPFL
EPFL units
| Event name | Event place | Event date |
Washington DC, USA | 9-11 September 2015 | |
Available on Infoscience
March 1, 2016
Use this identifier to reference this record