The key impact of incorporated Al2O3 barrier layer on W-based ReRAM switching performance
In this article, we inspected the bipolar resistive switching behavior of W-based ReRAMs, using HfO2 as switching layer. We have shown that the switching properties can be significantly enhanced by incorporating an Al2O3 layer as a barrier layer. It stabilizes the resistance states and lowers the operating current. Al2O3 acts as an oxygen scavenging blocking layer at W sides, results in the filament path constriction at the Al2O3/HfO2 interface. This leads to the more controllable reset operation and consecutively the HRS properties improvement. This allows the W/Al2O3/HfO2/Pt to switch at 10 times lower operating current of 100 mu A and 2 times higher memory window compared to the W/HfO2/Pt stacks. The LRS conduction of devices with the barrier layer is in perfect agreement with the Poole-Frenkel model.
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Shahrabi, E., Giovinazzo, C., Sandrini, J., & Leblebici, Y. (2018). The key impact of incorporated Al2O3 barrier layer on W-based ReRAM switching performance. 2018 14Th Conference on Phd Research in Microelectronics and Electronics (Prime 2018), 69–72. https://doi.org/10.1109/PRIME.2018.8430371
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WOS:000495592400018
2018-01-01
New York
978-1-5386-5386-9
69
72
REVIEWED
EPFL
| Event name | Event place | Event date |
Prague, CZECH REPUBLIC | Jul 02-05, 2018 | |