Monolithic Fabrication of Silicon Nanowires Bridging Thick Silicon Structures
A monolithic process is developed for the fabrication of Si nanowires within thick Si substrates. A combination of anisotropic etch and sidewall passivation is utilized to protect and release Si lines during the subsequent deep etch. An etch depth of 10 mu m is demonstrated with a future prospect for 50 mu m opening up new possibilities for the deterministic integration of nanowires with microsystems. Nanowires with in-plane dimensions as low as 20 nm and aspect ratios up to 150 are obtained. Nanomechanical characterization through bending tests further confirms structural integrity of the connection between nanowires and anchoring Si microstructures.
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Tasdemir, Z., Peric, O., Sacchetto, D., Fantner, G. E., Leblebici, Y., & Alaca, B. E. (2018). Monolithic Fabrication of Silicon Nanowires Bridging Thick Silicon Structures. Ieee Transactions on Nanotechnology, 17(6), 1299–1302. https://doi.org/10.1109/TNANO.2018.2868712
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WOS:000449979300031
2018-11-01
17
6
1299
1302
REVIEWED
EPFL