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  4. Low temperature single electron characteristics in gate-all-around MOSFET
 
conference paper

Low temperature single electron characteristics in gate-all-around MOSFET

Pott, V.  
•
Bouvet, D.  
•
Boucart, J.
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2006
Proceedings of the 36th European Solid-State Devices Research Conference, ESSDERC 2006
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Type
conference paper
DOI
10.1109/ESSDER.2006.307729
Web of Science ID

WOS:000245038000102

Author(s)
Pott, V.  
Bouvet, D.  
Boucart, J.
Tschuor, L.
Moselund, K. E.  
Ionescu, A. M.  
Date Issued

2006

Published in
Proceedings of the 36th European Solid-State Devices Research Conference, ESSDERC 2006
Start page

427

End page

430

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
NANOLAB  
Available on Infoscience
May 16, 2007
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/6993
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