conference paper
Analysis of a Novel BAW-based Power Amplifier
2009
Proc. of the European Conference on Circuit Theory and Design (ECCTD)
A novel MEMS-based co-designed power amplifier is presented. To introduce the analysis and evaluate the impact of realistic on-chip losses, two design approaches are discussed and compared. Then the study of the novel circuit, based on the integration of high-Q BAW resonators with a Class E PA, is described. The integration method is explained, demonstrating how a careful co-design can allow to reach optimum performances. To confirm the theory a design example in a standard 0.18 mum CMOS technology is provided, showing an output power of 14.7 dBm and a drain efficiency up to 56% at 2.44 GHz.
Type
conference paper
Author(s)
Contaldo, M.
Date Issued
2009
Published in
Proc. of the European Conference on Circuit Theory and Design (ECCTD)
Start page
375
End page
378
Editorial or Peer reviewed
REVIEWED
Written at
EPFL
EPFL units
Available on Infoscience
June 24, 2010
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