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research article

Shallow Impurities in Gaas-Ga1-Xalxas Quantum-Wells

Fraizzoli, S.
•
Pasquarello, Alfredo  
1991
Physica Scripta

A comprehensive theory of shallow impurities in quantum wells (QW's) is presented. The energy levels of donor and acceptor impurities are calculated within the effective mass theory including the mismatch of the band parameters and of the dielectric constants between well and barrier materials. The theory also accounts for Coulomb coupling between different subbands and, in the case of acceptors, for valence-band mixing. The method is based on an expansion of the envelope functions into a basis set consisting of products of two-dimensional hydrogenic-like functions and impurity-free QW eigen-functions at k parallel-to = 0. The present method is suited for the ground as well as for the excited impurity states and thus enables us to obtain the oscillator strengths of infrared transitions between these states. The results show a good agreement with recent experiments on both donor and acceptor impurities.

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Type
research article
DOI
10.1088/0031-8949/1991/T39/028
Web of Science ID

WOS:A1991GV57300029

Author(s)
Fraizzoli, S.
Pasquarello, Alfredo  
Date Issued

1991

Published in
Physica Scripta
Volume

T39

Start page

182

End page

187

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
CSEA  
Available on Infoscience
October 8, 2009
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/43342
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