In this work, an E-mode multichannel HEMT is demonstrated based on p-type NiO/SiO2 as a gate stack to form a junction tri-gate structure. NiO provides a high hole concentration ( approximate to 10(19) cm (-3) ), resulting in an effective depletion of electrons in the multiple 2DEG channels under the gate. A thin SiO2 layer acts as a sacrificial layer, preventing damage to the fins during NiO deposition. As a result, E-mode operation can be achieved with 3x-larger tri-gate fins, compared to SiO2 alone, with V(th )of 0.7 V (at 1 mu A/mm), negligible threshold voltage hysteresis ( Delta V-th of 0.05 V), together with small on-resistance ( R-ON ) of 2.8 m Omega & sdot; cm(2) for a gate-to-drain separation ( L-GD ) of 20 mu m. In addition, the devices showed exceptional off-state characteristics, including breakdown voltage ( V-br ) of 2.7 kV, and ON/OFF current ratio of 10(9) , showcasing the potential of the p-NiO/SiO2 gate stack for high-performance E-mode power devices.