Fundamental aspects and state-of-the-art results of thermal scanning probe lithography (t-SPL) are reviewed here. t-SPL is an emerging direct-write nanolithography method with many unique properties which enable original or improved nano-patterning in application fields ranging from quantum technologies to material science. In particular, ultrafast and highly localized thermal processing of surfaces can be achieved through the sharp heated tip in t-SPL to generate high-resolution patterns. We investigate t-SPL as a means of generating three types of material interaction: removal, conversion, and addition. Each of these categories is illustrated with process parameters and application examples, as well as their respective opportunities and challenges. Our intention is to provide a knowledge base of t-SPL capabilities and current limitations and to guide nanoengineers to the best-fitting approach of t-SPL for their challenges in nanofabrication or material science. Many potential applications of nanoscale modifications with thermal probes still wait to be explored, in particular when one can utilize the inherently ultrahigh heating and cooling rates. Review: Thermal scanning probe lithographyThermal scanning probe lithography is reviewed in the context of material removal, conversion and deposition. Scanning probe lithography has long been a promising technique for direct-write nanoscale patterning on surfaces. However, while the technique is widely used in research labs, the slow write speed has limited its use in industrial settings. Instead, thermal scanning probe lithography has emerged, in which a heated tip is used to induce localized changes in the material, enabling write speeds limited by the speed of movement of the tip itself. A team from Ecole Polytechnique Federale de Lausanne led by Juergen Brugger now reviews the current state of play for thermal scanning probe lithography, focusing on whether material is removed, changed or deposited by the heated tip, and the types of materials that have been studied.