A silicon stamp for nanoimprint lithography (NIL) was fabricated from the patterns defined by stencil lithography. Since stencil lithography has a capability of producing sub-micron patterns in a single process, we were able to make a silicon stamp with a very simple procedure consisting of only 4 steps. A series of experiments showed that about 200 nm of “defect” structures were well transferred from the stencil to the pattern on silicon stamp for NIL process, which replicates the structures into a silicon substrate by NIL followed by dry etching processes. The presented procedure has a potential to be applied to nanoscale stamp fabrication process.