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  4. High-Isolation Shunt-Series MEMS Switch for a Wide Frequency Range (6-40GHz)
 
conference paper

High-Isolation Shunt-Series MEMS Switch for a Wide Frequency Range (6-40GHz)

Fernández-Bolaños, M.
•
Dainesi, P.  
•
Ionescu, A. M.  
2008
MEMSWAVE 2008, 9th International Symposium on RF MEMS and RF Microsystems
9th International Symposium of RF MEMS and RF Microsystem (MEMSWAVE)

A fabrication method for silicon beams and membranes defined in lateral and vertical dimensions, as well as superposed silicon membranes, all realized in bulk silicon using only one lithographic step is proposed. This proposal is based on observations made on structures obtained by High Temperature Annealing (HTA) in hydrogen atmosphere process. The combination of design configuration and materials technology (hard mask) with the process shows the possibility of new 3D devices and cavities beyond previously reported capabilities of with this technique. The specific design and hard mask engineering presented can lead to structures used in a bulk silicon platform for 3D devices with optical and electronic functions for the fabrication of bulk silicon waveguides and transistors on stressed membranes with enhanced mobility.

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Type
conference paper
Author(s)
Fernández-Bolaños, M.
Dainesi, P.  
Ionescu, A. M.  
Date Issued

2008

Published in
MEMSWAVE 2008, 9th International Symposium on RF MEMS and RF Microsystems
Subjects

Silicon reflow

•

Hydrogen annealing

•

3D nanostructure design

•

Hard mask

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
NANOLAB  
Event nameEvent placeEvent date
9th International Symposium of RF MEMS and RF Microsystem (MEMSWAVE)

Heraklion (Greece)

July 1-3, 2008

Available on Infoscience
July 15, 2009
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/41325
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