With the continuous rise of the carrier frequencies in wireless systems, new material and design strategies enabling frequency scaling for surface acoustic wave resonator technology are required. We report AlScN-on-SiC Sezawa SAW resonators with resonances above 4 GHz. In previously demonstrated AlScN-based SAW resonators, the effective electromechanical coupling coefficient (k2eff) limited the bandwidth potential. We show that by integrating a patterned floating bottom electrode, the transduction efficiency can be enhanced compared to standard, IDT-only architectures. With a floating bottom electrode, we demonstrate Sezawa SAW resonators achieving a k2eff of 10.8%. In addition, we experimentally demonstrate filters with center frequencies in the 5–6 GHz range with 4–5% fractional bandwidth and a minimum insertion loss of 1 dB.