conference paper

CMOS 3D-Extended Metal Gate ISFETs with Near Nernstian Ion Sensitivity

Zhang, Jun-Rui
•
Bellando, F.  
•
Rupakula, M.  
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January 1, 2018
2018 76Th Device Research Conference (Drc)
76th Device Research Conference (DRC)
Type
conference paper
DOI
10.1109/DRC.2018.8442197
Web of Science ID

WOS:000444728400053

Author(s)
Zhang, Jun-Rui
Bellando, F.  
Rupakula, M.  
Cordero, E. Garcia
Ebejer, N.
Longo, J.  
Wildhaber, F.  
Guerin, H.  
Ionescu, A. M.  
Date Issued

2018-01-01

Publisher

IEEE

Publisher place

New York

Published in
2018 76Th Device Research Conference (Drc)
ISBN of the book

978-1-5386-3028-0

Series title/Series vol.

IEEE Device Research Conference Proceedings

Subjects

Engineering, Electrical & Electronic

•

Engineering

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
NANOLAB  
Event nameEvent placeEvent date
76th Device Research Conference (DRC)

Santa Barbara, CA

Jun 24-27, 2018

Available on Infoscience
December 13, 2018
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/151880