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research article

Detection of a single magnetic microbead using a miniaturized silicon Hall sensor

Besse, P.-A.  
•
Boero, G.  
•
Demierre, M.
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2002
Applied Physics Letters

Using a highly sensitive silicon Hall sensor fabricated in a standard complementary metal-oxide-semiconductor (CMOS) technology, we detect a single magnetic microbead of 2.8 μm in diameter. The miniaturized sensor has an active area of 2.4×2.4 μm 2, a sensitivity of 175 V/AT and a resistance of 8.5 k. Two detection methods, both exploiting the superparamagnetic behavior of the bead, are experimentally tested and their performances are compared. This work opens the way to the fabrication of low cost microsystems for biochemical applications based on the use of dense arrays of silicon Hall sensors and CMOS electronics. © 2002 American Institute of Physics.

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Type
research article
DOI
10.1063/1.1483909
Author(s)
Besse, P.-A.  
Boero, G.  
Demierre, M.
Pott, V.
Popovic, R.  
Date Issued

2002

Published in
Applied Physics Letters
Volume

80

Issue

22

Start page

4199

End page

4201

Editorial or Peer reviewed

NON-REVIEWED

Written at

EPFL

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LMIS1  
LMIS3  
Available on Infoscience
June 11, 2015
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/115024
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