book part or chapter
Core-level shifts in Si(001)-SiO2 systems: The value of first-principle investigations
1998
Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices
A first-principle approach allows the study of relaxed structural models for surfaces and interfaces. This is a powerful tool for the study of the local bonding. The utility of the first-principle theory is substantially extended through the calculation of core-level shifts. Such results can be used in conjunction with measured photoemission spectra to make progress in understanding the local atomic structure at interfaces. We review the quantitative comparison of the calculated core level shifts with experiment for a series of molecules. We then describe results for the Si(001)-SiO2 interface.
Type
book part or chapter
Author(s)
Date Issued
1998
Published in
Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices
Start page
89
End page
102
Series title/Series vol.
NATO Science Series; 47
Editorial or Peer reviewed
REVIEWED
Written at
EPFL
EPFL units
Available on Infoscience
October 8, 2009
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