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  4. Core-level shifts in Si(001)-SiO2 systems: The value of first-principle investigations
 
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Core-level shifts in Si(001)-SiO2 systems: The value of first-principle investigations

Pasquarello, Alfredo  
•
Hybertsen, M. S.
•
Rignanese, G. M.
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1998
Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices

A first-principle approach allows the study of relaxed structural models for surfaces and interfaces. This is a powerful tool for the study of the local bonding. The utility of the first-principle theory is substantially extended through the calculation of core-level shifts. Such results can be used in conjunction with measured photoemission spectra to make progress in understanding the local atomic structure at interfaces. We review the quantitative comparison of the calculated core level shifts with experiment for a series of molecules. We then describe results for the Si(001)-SiO2 interface.

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Type
book part or chapter
DOI
10.1007/978-94-011-5008-8_7
Author(s)
Pasquarello, Alfredo  
Hybertsen, M. S.
Rignanese, G. M.
Car, R.
Date Issued

1998

Published in
Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices
Start page

89

End page

102

Series title/Series vol.

NATO Science Series; 47

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
CSEA  
Available on Infoscience
October 8, 2009
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/43400
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