Voltage References for the Ultra-Wide Temperature Range from 4.2 K to 300 K in 40-nm CMOS
This paper presents a family of voltage references in standard 40-nm CMOS that exploits the temperature dependence of dynamic-threshold MOS, NMOS and PMOS transistors in weak inversion to enable operation over the ultra-wide temperature range from 4.2 K to 300 K. The proposed references achieve a temperature drift below 436 ppm/K over a statistically significant number of samples after a single-point trim and a supply regulation better than 1.7 %/V from a a supply as low as 0.99 V. These results demonstrate, for the first time, the generation of PVT-independent voltages over an ultra-wide temperature range using sub-1-V nanometer CMOS circuits, thus enabling the use of the proposed references in harsh environments, such as in space and quantum-computing applications.
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van Staveren, J., Almudever, C. G., Scappucci, G., Veldhorst, M., Babaie, M., Charbon, E., & Sebastiano, F. (2019). Voltage References for the Ultra-Wide Temperature Range from 4.2 K to 300 K in 40-nm CMOS. Ieee 45Th European Solid State Circuits Conference (Esscirc 2019), Proceedings of the European Solid-State Circuits Conference, 37–40. https://doi.org/10.1109/ESSCIRC.2019.8902861
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WOS:000520410000006
2019-01-01
New York
978-1-7281-1550-4
Proceedings of the European Solid-State Circuits Conference
37
40
REVIEWED
EPFL
| Event name | Event place | Event date |
Cracow, POLAND | Sep 23-26, 2019 | |