Resistive Programmable Through Silicon Vias for Reconfigurable 3D Fabrics

Sacchetto, Davide; Zervas, Michail; Temiz, Yuksel; De Micheli, Giovanni; Leblebici, Yusuf

doi:10.1109/TNANO.2011.2160557

research article

Resistive Programmable Through Silicon Vias for Reconfigurable 3D Fabrics

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2012

IEEE Transactions on Nanotechnology

In this letter we report on the fabrication and characterization of titanium dioxide (TiO2)-based resistive RAM (ReRAM) co-integration with 380 ìm-height Cu Through Silicon Via (TSV) arrays for programmable 3D interconnects. Nonvolatile resistive switching of Pt/TiO2/Pt thin films are first characterized with resistance ratio up to 5 orders of magnitude. Then co-integration of Pt/TiO2/Pt or Pt/TiO2 memory cells on 140 um and 60 um diameter Cu TSV are fabricated. Repeatable non-volatile bipolar switching of the ReRAM cells are demonstrated for different structures.

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Sacchetto, D., Zervas, M., Temiz, Y., De Micheli, G., & Leblebici, Y. (2012). Resistive Programmable Through Silicon Vias for Reconfigurable 3D Fabrics. IEEE Transactions on Nanotechnology, 11(1), 8–11. https://doi.org/10.1109/TNANO.2011.2160557

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