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research article

Intrinsic-Strain Engineering by Dislocation Imprint in Bulk Ferroelectrics

Zhuo, Fangping
•
Zhou, Xiandong
•
Gao, Shuang
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July 7, 2023
Physical Review Letters

We report an intrinsic strain engineering, akin to thin filmlike approaches, via irreversible hightemperature plastic deformation of a tetragonal ferroelectric single-crystal BaTiO3. Dislocations wellaligned along the [001] axis and associated strain fields in plane defined by the [110]/[1 over bar 10] plane are introduced into the volume, thus nucleating only in-plane domain variants. By combining direct experimental observations and theoretical analyses, we reveal that domain instability and extrinsic degradation processes can both be mitigated during the aging and fatigue processes, and demonstrate that this requires careful strain tuning of the ratio of in-plane and out-of-plane domain variants. Our findings advance the understanding of structural defects that drive domain nucleation and instabilities in ferroic materials and are essential for mitigating device degradation.

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Type
research article
DOI
10.1103/PhysRevLett.131.016801
Web of Science ID

WOS:001052998900001

Author(s)
Zhuo, Fangping
Zhou, Xiandong
Gao, Shuang
Dietrich, Felix
Groszewicz, Pedro B.
Fulanovi, Lovro
Breckner, Patrick
Xu, Bai-Xiang
Kleebe, Hans-Joachim
Damjanovic, Dragan  
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Date Issued

2023-07-07

Publisher

AMER PHYSICAL SOC

Published in
Physical Review Letters
Volume

131

Issue

1

Article Number

016801

Subjects

Physics, Multidisciplinary

•

Physics

•

domain-wall interactions

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piezoelectric properties

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thin-films

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polarization

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mechanism

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crystals

•

batio3

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motion

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
SCI-STI-DD  
Available on Infoscience
September 11, 2023
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/200577
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