Cathodoluminescence intensity and dislocation contrast evolutions under electron beam excitation in epitaxial GaN laterally overgrown on (0001) sapphire
We describe the first stage of the evolution of CL spectra, intensity and dislocation contrast under low keV electron beam for ELO-GaN with a low dislocation density. The UV and yellow intensities are decreased by beam irradiation. We have observed a broadening of the UV peak towards low energies followed by a red shift. This is explained in terms of an electron beam activation of non-radiative centers which relax partially the compressive strain, The dislocation contrast is lowered, but the dislocations become more non-radiative. We suggest that dislocations are preferential ways for the flux of non-radiative centers from the coalescence boundaries to the bulk. (C) 1999 Elsevier Science B.V. All rights reserved.
WOS:000084452200033
1999
274
1-3
148
151
Univ Sci & Technol Lille, Lab Struct & Proprietes Etat Solide, UPRESA 8008, F-59655 Villeneuve Dascq, France. CRHEA, CNRS, F-06560 Valbonne, France. Ecole Polytech Fed Lausanne, CIME, Lausanne, Switzerland. Ecole Polytech Fed Lausanne, IMO, Lausanne, Switzerland. Sieber, B, Univ Sci & Technol Lille, Lab Struct & Proprietes Etat Solide, UPRESA 8008, Batiment C6, F-59655 Villeneuve Dascq, France.
ISI Document Delivery No.: 268ZX
Cited Reference Count: 9
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