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  4. Single Crystal Silicon UHF Wine-Glass Ring Resonator with HfO2 Solid Dielectric Gap embedded in a Field Effect Transistor
 
conference poster not in proceedings

Single Crystal Silicon UHF Wine-Glass Ring Resonator with HfO2 Solid Dielectric Gap embedded in a Field Effect Transistor

Casu, Emanuele Andrea  
•
Rigante, Sara  
•
Fernandez-Bolanos Badia, Montserrat  
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2014
40th Micro and Nano Engineering Conference

In this work we present an ultra-high-frequency (UHF) single crystal silicon ring resonator with two embedded FETs. Electromechanical coupling is realized through a high-K, namely 10 nm HfO2, dielectric solid-gap sandwiched between the gate electrode and the ring lateral surface. The higher permittivity of the solid-gap material as well as the technological possibility of having narrower gap than air-gap counterparts, will uniquely allow to improve at the same time the electromechanical coupling and the FET amplifcation by increasing the gate capacitance.

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Type
conference poster not in proceedings
Author(s)
Casu, Emanuele Andrea  
•
Rigante, Sara  
•
Fernandez-Bolanos Badia, Montserrat  
•
Ionescu, Mihai Adrian  
Date Issued

2014

Subjects

RF MEMS

•

Resonator

•

FET

•

Hafnium Oxide

Written at

EPFL

EPFL units
NANOLAB  
Event nameEvent placeEvent date
40th Micro and Nano Engineering Conference

Lausanne, CH

September 22-26, 2014

Available on Infoscience
February 3, 2016
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/123217
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