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  4. Bidirectional Non-Filamentary RRAM as an Analog Neuromorphic Synapse, Part II: Impact of Al/Mo/Pr0.7Ca0.3MnO3 Device Characteristics on Neural Network Training Accuracy
 
research article

Bidirectional Non-Filamentary RRAM as an Analog Neuromorphic Synapse, Part II: Impact of Al/Mo/Pr0.7Ca0.3MnO3 Device Characteristics on Neural Network Training Accuracy

Fumarola, A
•
Sidler, S
•
Moon, K
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2018
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
  • Details
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Type
research article
DOI
10.1109/JEDS.2017.2782184
Web of Science ID

WOS:000423582900026

Author(s)
Fumarola, A
Sidler, S
Moon, K
Jang, J
Shelby, RM
Narayanan, P
Leblebici, Y
Hwang, H
Burr, GW
Date Issued

2018

Published in
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
Volume

6

Issue

1

Start page

169

End page

178

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LSM  
Available on Infoscience
November 8, 2018
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/149912
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