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research article

Stranski-Krastanov GaN/AlN quantum dots grown by metal organic vapor phase epitaxy

Simeonov, D.
•
Feltin, E.
•
Carlin, J. F.  
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2006
Journal of Applied Physics

We report a thorough study of the growth of self-assembled GaN/AlN quantum dots (QDs). These QDs were grown on sapphire substrates using the Stranski-Krastanov (SK) growth mode by means of low-pressure metal organic vapor phase epitaxy. The influence of the V/III ratio on the QD height, shape, and density is studied. Emissions above (3.8 eV) and below (2.8 eV) the band gap of GaN are observed for small dots (1.3 nm) and large ones (4.4 nm), respectively. Special emphasis was given to the SK growth mode transition and the parameters influencing the QD formation. The two-dimensional-three-dimensional transition is studied continuously by photoluminescence mapping showing its high sensitivity to the V/III ratio. (C) 2006 American Institute of Physics. (C) 2006 American Institute of Physics.

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Type
research article
DOI
10.1063/1.2189975
Web of Science ID

WOS:000237404200022

Author(s)
Simeonov, D.
•
Feltin, E.
•
Carlin, J. F.  
•
Butte, R.  
•
Ilegems, M.
•
Grandjean, N.  
Date Issued

2006

Published in
Journal of Applied Physics
Volume

99

Issue

8

Article Number

3509

Subjects

MOLECULAR-BEAM EPITAXY

•

OPTICAL-PROPERTIES

•

EQUILIBRIUM SHAPE

•

GAN

•

SURFACES

•

MORPHOLOGY

•

THICKNESS

•

ISLANDS

•

DENSITY

•

WELLS

Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LASPE  
Available on Infoscience
October 5, 2010
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/55128
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