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research article

On performance scaling and speed of junctionless transistors

Koukab, A.
•
Jazaeri, F.
•
Sallese, Jean-Michel  
2013
Solid-State Electronics

A prospective study of the junctionless transistors (JLTs) scaling performances based both on TCAD and analytical evaluations of the intrinsic delay after considering on/off voltage constraints is proposed. The tradeoffs between speed and switching power performances in regard to the JLT parameters are analyzed. It is demonstrated that JLTs performances in terms of speed are very similar to that of regular bulk MOSFETs, and that increasing the drive current and speed still needs to shrink the gate oxide just as in MOSFETs. (C) 2012 Elsevier Ltd. All rights reserved.

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Type
research article
DOI
10.1016/j.sse.2012.08.001
Web of Science ID

WOS:000313611000006

Author(s)
Koukab, A.
Jazaeri, F.
Sallese, Jean-Michel  
Date Issued

2013

Publisher

Pergamon-Elsevier Science Ltd

Published in
Solid-State Electronics
Volume

79

Start page

18

End page

21

Subjects

Junctionless

•

Gated resistor

•

VeSFET

•

MOSFET

•

Delay

•

Performance roadmap

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LEG1  
EDLAB  
Available on Infoscience
March 28, 2013
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/90981
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