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  4. Contact properties of high-mobility, air-stable, low-voltage organic n-channel thin-film transistors based on a naphthalene tetracarboxylic diimide
 
research article

Contact properties of high-mobility, air-stable, low-voltage organic n-channel thin-film transistors based on a naphthalene tetracarboxylic diimide

Roedel, R.
•
Letzkus, F.
•
Zaki, T.
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2013
Applied Physics Letters

Air-stable bottom-gate, top-contact n-channel organic transistors based on a naphthalene diimide exhibiting electron mobilities up to 0.8 cm(2)/Vs at low voltages were fabricated. Transistors with channel lengths of 1 mu m show a transconductance of 60 mS/m, but are significantly limited by the contact resistance. Transmission line measurements in combination with contact resistance models were applied to investigate this influence. Both contact resistance and contact resistivity are proportional to the inverse gate overdrive voltage. Organic complementary ring oscillators were fabricated on a flexible plastic substrate showing record signal delays down to 17 mu s at a supply voltage of 2.6 V. (C) 2013 AIP Publishing LLC.

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Type
research article
DOI
10.1063/1.4811127
Web of Science ID

WOS:000320622600083

Author(s)
Roedel, R.
Letzkus, F.
Zaki, T.
Burghartz, J. N.
Kraft, U.
Zschieschang, U.
Kern, K.  
Klauk, H.
Date Issued

2013

Publisher

Amer Inst Physics

Published in
Applied Physics Letters
Volume

102

Issue

23

Article Number

233303

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LSEN  
Available on Infoscience
October 1, 2013
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/95219
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