Subsolidus equilibria in the RuO2–Bi2O3–SiO2 diagram were studied with the aim of investigating possible interactions between the bismuth-ruthenate- based conductive phase and the silica-rich glasses in thick-film resistors. The tie lines are between Bi2Ru2O7 and Bi12SiO20 (gamma phase), between Bi2Ru2O7 and Bi4Si3O12, and between RuO2 and Bi4Si3O12. This indicates that the bismuth ruthenate is not stable in the presence of the silica-rich glass phase.