research article
Charge-Based Modeling of Long-Channel Symmetric Double-Gate Junction FETs—Part I: Drain Current and Transconductances
Type
research article
Web of Science ID
WOS:000435546700010
Author(s)
Date Issued
2018
Published in
Volume
65
Issue
7
Start page
2744
End page
2750
Editorial or Peer reviewed
REVIEWED
Written at
EPFL
EPFL units
Available on Infoscience
October 25, 2017
Use this identifier to reference this record