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research article

n(+)-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts

Lugani, L.  
•
Malinverni, M.  
•
Tirelli, S.
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2014
Applied Physics Letters

We report on the low-temperature growth of heavily Si-doped (>10(20) cm(-3)) n(+)-type GaN by N-rich ammonia molecular beam epitaxy (MBE) with very low bulk resistivity (<4 x 10(-4) Omega.cm). This is applied to the realization of regrown ohmic contacts on InAlN/GaN high electron mobility transistors. A low n(+)-GaN/2 dimensional electron gas contact resistivity of 0.11 Omega.mm is measured, provided an optimized surface preparation procedure, which is shown to be critical. This proves the great potentials of ammonia MBE for the realization of high performance electronic devices. (C) 2014 AIP Publishing LLC.

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Type
research article
DOI
10.1063/1.4902347
Web of Science ID

WOS:000345513300041

Author(s)
Lugani, L.  
Malinverni, M.  
Tirelli, S.
Marti, D.
Giraud, E.  
Carlin, J. -F.  
Bolognesi, C. R.
Grandjean, N.  
Date Issued

2014

Publisher

Amer Inst Physics

Published in
Applied Physics Letters
Volume

105

Issue

20

Article Number

202113

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LASPE  
Available on Infoscience
December 30, 2014
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/109673
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