Repository logo

Infoscience

  • English
  • French
Log In
Logo EPFL, École polytechnique fédérale de Lausanne

Infoscience

  • English
  • French
Log In
  1. Home
  2. Academic and Research Output
  3. Journal articles
  4. Analytical Modeling of Short-Channel MOSFET Differential Pair Non-Linearity
 
Loading...
Thumbnail Image
research article

Analytical Modeling of Short-Channel MOSFET Differential Pair Non-Linearity

Pekcokguler, Naci
•
Han, Hung Chi  
•
Morche, Dominique
Show more
2024
IEEE Transactions on Circuits and Systems I: Regular Papers

Energy efficiency is of utmost importance in modern applications. Power consumption optimisation could be improved by a comprehensive analytical modeling of the characteristics of critical blocks in a system. Dynamic range (DR) has a strong effect on the power consumption of analog circuits, and is determined by circuit non-linearity and noise level. Noise is well modelled even in deep sub-micron technologies, yet there is a lack of analysis and modeling of the non-linearity. An analytical MOSFET differential pair non-linearity model is presented in this work. The proposed model is universal to a wide range of technologies from long to ultra-deep sub-micron devices, and is valid for all operating regions as it is based on the EKV MOSFET model. Furthermore, a model including drain-voltage-induced non-linearity is also developed, and a concise 3dB input intercept point (IIP3) formula incorporating the drain induced non-linearity in terms of the voltage gain is presented. The proposed models are validated with DC and AC simulations and measurements.

  • Details
  • Metrics
Type
research article
DOI
10.1109/TCSI.2024.3399001
Scopus ID

2-s2.0-85193547240

Author(s)
Pekcokguler, Naci
•
Han, Hung Chi  
•
Morche, Dominique
•
Dehollain, Catherine  
•
Burg, Andreas  
•
Enz, Christian  
Date Issued

2024

Published in
IEEE Transactions on Circuits and Systems I: Regular Papers
Volume

71

Issue

10

Start page

4411

End page

4419

Subjects

amplifier non-linearity

•

charge-based

•

differential pair non-linearity

•

drain voltage induced non-linearity

•

EKV model

•

MOSFET non-linearity model

•

OTA non-linearity

Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
AQUA  
PH-STI  
MSIC-LAB  
Available on Infoscience
January 16, 2025
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/242986
Logo EPFL, École polytechnique fédérale de Lausanne
  • Contact
  • infoscience@epfl.ch

  • Follow us on Facebook
  • Follow us on Instagram
  • Follow us on LinkedIn
  • Follow us on X
  • Follow us on Youtube
AccessibilityLegal noticePrivacy policyCookie settingsEnd User AgreementGet helpFeedback

Infoscience is a service managed and provided by the Library and IT Services of EPFL. © EPFL, tous droits réservés