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conference paper

Comprehensive Design-oriented FDSOI EKV Model

Han, Hung-Chi  
•
D'Amico, Antonio  
•
Enz, Christian  
January 1, 2022
2022 29Th International Conference On Mixed Design Of Integrated Circuits And System (Mixdes 2022)
29th International Conference on Mixed Design of Integrated Circuits and System (MIXDES)

The work presents the comprehensive design-oriented EKV model for FDSOI technologies, including the backgate effects and geometry dependence. Despite its simplicity, the model correctly captures not only the dependence of the threshold voltage versus the back-gate voltage, but also the changes in the slope factor and low-field mobility. This results in a normalized transconductance efficiency that becomes independent of the back-gate voltage over a wide range. The model is validated thanks to the use of the Python-based automated parameter extraction tool on a 22nm FDSOI technology.

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Type
conference paper
DOI
10.23919/MIXDES55591.2022.9838014
Web of Science ID

WOS:000853346000006

Author(s)
Han, Hung-Chi  
D'Amico, Antonio  
Enz, Christian  
Date Issued

2022-01-01

Publisher

IEEE

Publisher place

New York

Published in
2022 29Th International Conference On Mixed Design Of Integrated Circuits And System (Mixdes 2022)
Start page

40

End page

44

Subjects

Engineering, Electrical & Electronic

•

Engineering

•

fdsoi

•

g(m) / i-d

•

back-gate effect

•

inversion coefficient

•

low power

•

analog design

•

soi-mosfets

•

mobility

•

channel

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
ICLAB  
Event nameEvent placeEvent date
29th International Conference on Mixed Design of Integrated Circuits and System (MIXDES)

Wroclaw, POLAND

Jun 23-24, 2022

Available on Infoscience
September 26, 2022
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/190916
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