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  4. Effect of applied bias voltage on the static and dynamic characteristics of self-pulsating multi-section InGaN-based laser diode
 
conference paper

Effect of applied bias voltage on the static and dynamic characteristics of self-pulsating multi-section InGaN-based laser diode

Sulmoni, L.  
•
Lamy, J.-M.  
•
Carlin, J.-F.  
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2012
2012 23Rd Ieee International Semiconductor Laser Conference (Islc)
23rd IEEE International Semiconductor Laser Conference (ISLC)
  • Details
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Type
conference paper
DOI
10.1109/ISLC.2012.6348355
Web of Science ID

WOS:000316820100058

Author(s)
Sulmoni, L.  
Lamy, J.-M.  
Carlin, J.-F.  
Zeng, X.
Boiko, D. L.
Grandjean, N.  
Date Issued

2012

Publisher

Ieee

Publisher place

New York

Published in
2012 23Rd Ieee International Semiconductor Laser Conference (Islc)
ISBN of the book

978-1-4577-0828-2

Total of pages

2

Series title/Series vol.

IEEE International Semiconductor Laser Conference

Start page

114

End page

115

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LASPE  
Event name
23rd IEEE International Semiconductor Laser Conference (ISLC)
Available on Infoscience
May 13, 2013
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/92204
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