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  4. Mobility Extraction Assessment in GAA Si NW JL FETs with Cross-Section Down to 5 nm
 
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conference paper

Mobility Extraction Assessment in GAA Si NW JL FETs with Cross-Section Down to 5 nm

Najmzadeh, Mohammad  
•
Sallese, Jean-Michel  
•
Berthome, Matthieu
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2013
2013 14Th International Conference On Ultimate Integration On Silicon (Ulis)
14th International Conference on Ultimate Integration on Silicon (ULIS)

In this paper, we report for the first time, assessment on mobility extraction in equilateral triangular gate-all-around Si nanowire junctionless (JL) nMOSFETs with cross-section down to 5 nm. This analysis was performed in accumulation regime, as a first step, addressing bias-dependency of various key MOSFET parameters (e. g. series resistance, channel width and gate-channel capacitance), non-uniform electron density due to corners and quantization. A significant bias-dependent series resistance variation in JL MOSFETs is reported above flat-band, leading to a significant mobility extraction accuracy drop of similar to 50%. All quasistationary device simulations were done on 100 nm long channel devices with 5-20 nm NW width, 2 nm SiO2 gate oxide thickness and 1x10(19) cm(-3) n-type channel doping using a constant mobility model (100 cm(2)/V.s).

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Type
conference paper
DOI
10.1109/ULIS.2013.6523512
Web of Science ID

WOS:000325214300026

Author(s)
Najmzadeh, Mohammad  
•
Sallese, Jean-Michel  
•
Berthome, Matthieu
•
Grabinski, Wladek
•
Ionescu, Adrian M.  
Date Issued

2013

Publisher

IEEE

Publisher place

New York

Published in
2013 14Th International Conference On Ultimate Integration On Silicon (Ulis)
ISBN of the book

978-1-4673-4802-7

Total of pages

4

Series title/Series vol.

International Conference on Ultimate Integration on Silicon

Start page

106

End page

109

Subjects

Si nanowire

•

Multi-gate

•

Mobility extraction

•

Corner effect

•

Junctionless

•

Accumulation

•

TCAD simulation

Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
NANOLAB  
EDLAB  
Event name
14th International Conference on Ultimate Integration on Silicon (ULIS)
Available on Infoscience
December 9, 2013
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/97556
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