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  4. Relaxor behavior and electromechanical properties of Pb(Mg1/3Nb2/3)O-3 thin films
 
research article

Relaxor behavior and electromechanical properties of Pb(Mg1/3Nb2/3)O-3 thin films

Kighelman, Z.  
•
Damjanovic, D.  
•
Seifert, A.  
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1998
Applied Physics Letters

Pb(Mg1/3Nb2/3)O-3 (PMN) alkoxide precursor solutions were synthesized and used to prepare thin films by spin coating on TiO2/Pt/TiO2/SiO2/Si substrates. Many parameters like the use of homogeneous and stable precursor solutions and appropriate processing were used to greatly reduce the presence of the nonferroelectric pyrochlore phase. Transmission electron microscopy investigations, dielectric, electrostrictive, and direct current field induced piezoelectric measurements were carried out and have shown that PMN thin films exhibit a relaxor-like behavior. (C) 1998 American Institute of Physics. [S0003-6951(98)03142-8].

  • Details
  • Metrics
Type
research article
DOI
10.1063/1.121702
Web of Science ID

WOS:000076427800017

Author(s)
Kighelman, Z.  
Damjanovic, D.  
Seifert, A.  
Sagalowicz, L.
Setter, N.  
Date Issued

1998

Published in
Applied Physics Letters
Volume

73

Issue

16

Start page

2281

End page

2283

Subjects

sol-gel method

•

dielectric-properties

•

microstructure

Note

Kighelman, Z Swiss Fed Inst Technol, Dept Mat, Ceram Lab, CH-1015 Lausanne, Switzerland Swiss Fed Inst Technol, Dept Mat, Ceram Lab, CH-1015 Lausanne, Switzerland

128UY

Cited References Count:16

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LC  
Available on Infoscience
August 21, 2006
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/233335
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