Efficient intersubband scattering via carrier-carrier interaction in quantum wells
Using femtosecond resonant luminescence, we have measured the intersubband scattering fare of electrons in wide GaAs quantum wells at very low excitation densities. Even when the spacing between the first two electron subbands is smaller than the LO phonon energy, we observe that intersubband scattering is a subpicosecond process, much faster than previously measured or anticipated. Our experimental results are in perfect agreement with Monte Carlo calculations, which show that carrier-carrier interaction is responsible for the ultrafast transitions.
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1998
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Swiss Fed Inst Technol, IMO, Dept Phys, CH-1015 Lausanne, Switzerland. Univ Oxford, Dept Phys, Clarendon Lab, Oxford OX1 3PU, England. Hartig, M, Swiss Fed Inst Technol, IMO, Dept Phys, CH-1015 Lausanne, Switzerland.
ISI Document Delivery No.: YZ785
Cited Reference Count: 18
Cited References:
CRAIG K, 1994, SEMICOND SCI TECH S, V9, P627
DEVEAUD B, 1990, PHYS REV B, V42, P7021
DUR M, 1996, PHYS REV B, V54, P17794
ELSAESSER T, 1991, PHYS REV LETT, V66, P1757
FAIST J, 1994, APPL PHYS LETT, V64, P872
FAIST J, 1994, SCIENCE, V264, P553
FERREIRA R, 1989, PHYS REV B, V40, P1074
GOODNICK SM, 1988, PHYS REV B, V37, P2578
HAACKE S, 1997, PHYS REV LETT, V78, P2228
HARTIG M, 1996, PHYS REV B, V54, P14269
HELM M, 1994, APPL PHYS LETT, V64, P872
HEYMAN JN, 1995, PHYS REV LETT, V74, P2682
LEE SC, 1995, PHYS REV B, V52, P1874
LEVENSON JA, 1989, SOLID STATE ELECTRON, V32, P1869
MURDIN BN, 1994, SEMICOND SCI TECH, V9, P1554
OBERLI DY, 1987, PHYS REV LETT, V59, P696
ROTA L, 1993, PHYS REV B, V47, P4226
TATHAM MC, 1989, PHYS REV LETT, V63, P1637
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