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  4. Ferroelectric and piezoelectric properties of lanthanoid-substituted Bi4Ti3O12 thin films grown on (111)Pt and (100)IrO2 electrodes
 
research article

Ferroelectric and piezoelectric properties of lanthanoid-substituted Bi4Ti3O12 thin films grown on (111)Pt and (100)IrO2 electrodes

Adachi, Y.
•
Su, D.  
•
Muralt, P.  
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2005
Applied Physics Letters

We investigated he effect of film orientation on piezoelectric and ferroelectric properties of (Bi(3.25)Ln(0.75))Ti3O12 (Ln=La, Nd, and Sm). c-axis-oriented films were grown on (111)Pt electrodes with nondoped Bi4Ti3O12 buffer layers. The films grown on (100)IrO2 electrodes showed predominantly (111) and (110) orientation. The piezoelectric coefficient d(33,f) and the remanent polarization P-r were larger for (111)- and (110)-oriented films than for c-axis-oriented films. This relation was independent of the type of lanthanide species used as Bi substituting ion. This strongly indicates that the direction of the spontaneous polarization vector does not turn toward the c axis due to such substitutions, as was recently proposed in the literature. (c) 2005 American Institute of Physics.

  • Details
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Type
research article
DOI
10.1063/1.1915512
Web of Science ID

WOS:000229185500043

Author(s)
Adachi, Y.
Su, D.  
Muralt, P.  
Setter, N.  
Date Issued

2005

Published in
Applied Physics Letters
Volume

86

Issue

17

Article Number

172904

Subjects

large remanent polarization

•

bismuth-titanate

•

orientation

•

dependence

•

memories

Note

Adachi, Y Ecole Polytech Fed Lausanne, Ceram Lab, CH-1015 Lausanne, Switzerland Ecole Polytech Fed Lausanne, Ceram Lab, CH-1015 Lausanne, Switzerland

927HR

Cited References Count:17

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LC  
Available on Infoscience
August 21, 2006
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/233550
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