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research article

DC and RF characteristics of InAlAs/InGaAs dual-gate TEGFETs

Gueissaz, F.
•
Houdré, R.
•
Ilegems, M.  
1991
Electronics Letters
  • Details
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Type
research article
DOI
10.1049/el:19910396
Web of Science ID

WOS:A1991FH52800010

Author(s)
Gueissaz, F.
Houdré, R.
Ilegems, M.  
Date Issued

1991

Published in
Electronics Letters
Volume

27

Issue

8

Start page

631

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LOEQ  
SCI-SB-RH  
Available on Infoscience
August 31, 2007
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/11027
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