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  4. Impact of Mode-Hopping Noise on InGaN Edge Emitting Laser Relative Intensity Noise Properties
 
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research article

Impact of Mode-Hopping Noise on InGaN Edge Emitting Laser Relative Intensity Noise Properties

Congar, Antoine
•
Hussain, Kamal
•
Pareige, Christelle
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2018
IEEE Journal of Quantum Electronics

In this paper, we report, through a comparative analysis of static and dynamic measurements, on the impact of mode hopping on the overall intensity noise dynamics of InGaN edge emitting lasers. Mode clustering usually observed in InGaN lasers enhances the mode competition and then the laser intensity fluctuation. Variations as large as 20 dB have been observed. The coexistence of longitudinal modes induces mode competition and then unstable bimodal lasing. This mode competition is mediated by the temporal fluctuations of spontaneous emission through the nonlinear cross saturation of the optical gain. The subsequent enhancement of the relative intensity noise can be detrimental for applications, where the intensity stability of InGaN lasers is a key parameter. Our experimental observations are supported by a simple rate equation model. We point out the major importance of the different modal gain in the bimodal regime on the overall intensity noise of the laser.

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Type
research article
DOI
10.1109/Jqe.2017.2774358
Web of Science ID

WOS:000418046000001

Author(s)
Congar, Antoine
•
Hussain, Kamal
•
Pareige, Christelle
•
Butte, Raphael  
•
Grandjean, Nicolas  
•
Besnard, Pascal
•
Trebaol, Stephane
Date Issued

2018

Publisher

Ieee-Inst Electrical Electronics Engineers Inc

Published in
IEEE Journal of Quantum Electronics
Volume

54

Issue

1

Article Number

1100107

Subjects

Relative intensity noise (RIN)

•

nonlinear gain

•

semiconductor GaN lasers

Peer reviewed

REVIEWED

Written at

OTHER

EPFL units
LASPE  
Available on Infoscience
January 15, 2018
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/143974
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