In this work, a Tri-Gate AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT) with lithium nickel oxide (LiNiO) gate dielectric is demonstrated for enhancement-mode (e-mode) operation. The high-quality of pulse-laser-deposited (PLD) LiNiO resulted in e-mode devices without the need for special epitaxial layers, barrier recess, or regrowth. The LiNiO Tri-Gate devices presented a positive Vth, low Ron, large maximum on-current (Ion, max), and high breakdown voltage (Vbr) simultaneously. LiNiO also yielded excellent negative bias temperature instability (NBTI) performance, small hysteresis, and small frequency dispersion.