Mobility Degradation of 28-nm Bulk MOSFETs Irradiated to Ultrahigh Total Ionizing Doses

Zhang, Chunmin; Jazaeri, Farzan; Borghello, Giulio; Mattiazzo, Serena; Baschirotto, Andrea; Enz, Christian

doi:10.1109/CICTA.2018.8705713

conference paper

Mobility Degradation of 28-nm Bulk MOSFETs Irradiated to Ultrahigh Total Ionizing Doses

Zhang, Chunmin

•

Jazaeri, Farzan

•

Borghello, Giulio

2018

Proceedings of 2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)

2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA 2018)

Using the Y-function method, this paper experimentally investigates the effects of total ionizing dose up to 1 Grad on the channel mobility of a commercial 28-nm bulk CMOS process.

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icta2018_v4_mobi_degra.pdf

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Preprint

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http://purl.org/coar/version/c_71e4c1898caa6e32

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