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research article

Band structure engineering in organic semiconductors

Schwarze, Martin
•
Tress, Wolfgang  
•
Beyer, Beatrice
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2016
Science

A key breakthrough in modern electronics was the introduction of band structure engineering, the design of almost arbitrary electronic potential structures by alloying different semiconductors to continuously tune the band gap and band-edge energies. Implementation of this approach in organic semiconductors has been hindered by strong localization of the electronic states in these materials. We show that the influence of so far largely ignored long-range Coulomb interactions provides a workaround. Photoelectron spectroscopy confirms that the ionization energies of crystalline organic semiconductors can be continuously tuned over a wide range by blending them with their halogenated derivatives. Correspondingly, the photovoltaic gap and open-circuit voltage of organic solar cells can be continuously tuned by the blending ratio of these donors.

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Type
research article
DOI
10.1126/science.aaf0590
Web of Science ID

WOS:000377975400045

Author(s)
Schwarze, Martin
Tress, Wolfgang  
Beyer, Beatrice
Gao, Feng
Scholz, Reinhard
Poelking, Carl
Ortstein, Katrin
Guenther, Alrun A.
Kasemann, Daniel
Andrienko, Denis
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Date Issued

2016

Publisher

American Association for the Advancement of Science

Published in
Science
Volume

352

Issue

6292

Start page

1446

End page

1449

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LPI  
Available on Infoscience
July 19, 2016
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/127573
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