C- and L-band tunable integrated Erbium lasers via scalable manufacturing
We demonstrate an integrated Erbium-based tunable laser using wafer-scale fabrication and ion implantation of silicon nitride photonic integrated circuits. We achieve single-frequency lasing tunable from 1530 nm to 1621 nm covering nearly the entire optical C- and L-band.
2-s2.0-105009300542
École Polytechnique Fédérale de Lausanne
École Polytechnique Fédérale de Lausanne
École Polytechnique Fédérale de Lausanne
École Polytechnique Fédérale de Lausanne
Applied Materials Incorporated
École Polytechnique Fédérale de Lausanne
Applied Materials Incorporated
École Polytechnique Fédérale de Lausanne
École Polytechnique Fédérale de Lausanne
École Polytechnique Fédérale de Lausanne
2025
9781557527370
Technical Digest Series
M3J.4
REVIEWED
EPFL
| Event name | Event acronym | Event place | Event date |
OFC 2025 | San Francisco, United States | 2025-03-30 - 2025-04-03 | |
| Funder | Funding(s) | Grant Number | Grant URL |
Defense Advanced Research Projects Agency | |||
EU H2020 research and innovation programme | |||
EPFL center of Micro-NanoTechnology | |||
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